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Other articles related with "breakdown voltage (BV)"：
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80701 |
Xin-Xing Fei(费新星), Ying Wang(王颖), Xin Luo(罗昕), Cheng-Hao Yu(于成浩) |
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Simulation study of high voltage GaN MISFETs with embedded PN junction |
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Chin. Phys. B
2020 Vol.29 (8): 80701-080701
[Abstract]
(521)
[HTML 0 KB]
[PDF 572 KB]
(121)
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17701 |
Wei Li(李威), Zhi Zheng(郑直), Zhigang Wang(汪志刚), Ping Li(李平), Xiaojun Fu(付晓君), Zhengrong He(何峥嵘), Fan Liu(刘凡), Feng Yang(杨丰), Fan Xiang(向凡), Luncai Liu(刘伦才) |
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A novel P-channel SOI LDMOS structure with non-depletion potential-clamped layer |
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Chin. Phys. B
2017 Vol.26 (1): 17701-017701
[Abstract]
(705)
[HTML 1 KB]
[PDF 1290 KB]
(515)
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38503 |
Wu Wei (伍伟), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Fang Jian (方健), Li Zhao-Ji (李肇基) |
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Low on-resistance high-voltage lateral double-diffused metal oxide semiconductor with a buried improved super-junction layer |
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Chin. Phys. B
2014 Vol.23 (3): 38503-038503
[Abstract]
(519)
[HTML 1 KB]
[PDF 749 KB]
(611)
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